Infineon IPAW60R190CE CoolMOS™ Power Transistor: Advanced 600V Superjunction MOSFET for High-Efficiency Switching Applications
The relentless pursuit of higher efficiency and power density in modern electronics drives the continuous innovation in power semiconductor technology. At the forefront of this evolution is Infineon's IPAW60R190CE, a 600V CoolMOS™ Power Transistor that exemplifies the pinnacle of Superjunction (SJ) MOSFET design. Engineered for demanding switching applications, this device sets a new benchmark for performance, reliability, and efficiency.
The cornerstone of the IPAW60R190CE's superiority is its advanced Superjunction technology. This design fundamentally redefines the traditional trade-off between on-state resistance (RDS(on)) and switching losses. By enabling a drastically reduced RDS(on) of a mere 190 mΩ at maximum gate voltage, it minimizes conduction losses. Concurrently, its exceptionally low gate charge (QG) and output charge (Qoss) ensure ultra-fast switching speeds and significantly reduced switching losses. This combination is critical for applications operating at high frequencies, where efficiency gains are most pronounced.
This MOSFET is specifically tailored for high-efficiency switching applications across a broad spectrum of industries. It serves as an ideal component in:
Switched-Mode Power Supplies (SMPS): Particularly in server, telecom, and industrial power supplies where high efficiency targets like 80 Plus Titanium are mandatory.
Power Factor Correction (PFC) Stages: Its fast switching capability and robust performance make it perfect for both interleaved and totem-pole PFC circuits.
Solar Inverters and Energy Storage Systems: Enhances overall system efficiency in renewable energy conversion and management.
Motor Drives and Industrial Automation: Provides reliable and efficient power switching in demanding industrial environments.
Beyond its electrical prowess, the IPAW60R190CE is housed in a TO-247 package, renowned for its superior thermal performance. This package allows for excellent heat dissipation, enabling the device to handle high power levels while maintaining a lower operating temperature, which directly translates to improved long-term reliability and system ruggedness. Furthermore, the CoolMOS™ CE series is designed with a strong focus on robustness, offering high immunity against avalanche and overcurrent conditions, which is vital for ensuring system stability under stressful operational transients.
ICGOOODFIND: The Infineon IPAW60R190CE is a premier 600V Superjunction MOSFET that delivers an unparalleled blend of extremely low on-resistance and minimal switching losses. Its advanced technology is a key enabler for next-generation power designs, allowing engineers to achieve higher power density, superior energy efficiency, and enhanced system reliability in their high-performance switching applications.
Keywords: CoolMOS™, Superjunction MOSFET, High-Efficiency Switching, Low RDS(on), 600V Power Transistor
