Infineon IPB017N10N5LFATMA1 100V OptiMOS 5 Power MOSFET: Enabling High-Efficiency Power Conversion

In the rapidly evolving field of power electronics, achieving high efficiency and power density is paramount. The Infineon IPB017N10N5LFATMA1, a 100V N-channel power MOSFET from the OptiMOS™ 5 technology family, stands out as a premier solution designed to meet these demanding requirements. This device is engineered to deliver exceptional performance in a wide array of applications, from industrial motor drives and solar inverters to advanced computing and telecom power systems.

The cornerstone of this MOSFET's superiority is its revolutionary OptiMOS™ 5 superjunction technology. This advanced process technology achieves a remarkable reduction in key figures of merit, most notably the drain-source on-state resistance (R DS(on)) and gate charge (Q G). With an ultra-low R DS(on) of just 1.7 mΩ, power losses due to conduction are drastically minimized. Concurrently, the significantly lower gate charge ensures that switching losses are also greatly reduced. This optimal balance between conduction and switching performance is critical for operating at higher frequencies, which in turn allows for the design of smaller, more compact magnetic components and filters.

Furthermore, the device boasts an exceptional body diode robustness with a high softness factor. This characteristic is vital for applications requiring hard commutation, such as in power factor correction (PFC) circuits and synchronous rectification, as it minimizes reverse recovery losses and enhances overall system reliability. The 100V voltage rating provides a comfortable design margin for 48V bus architectures commonly found in data centers and telecommunications equipment, ensuring stable and safe operation under voltage transients.

Housed in a space-saving PG-TDSON-8 package, this MOSFET offers an excellent power-to-footprint ratio. The package features an exposed top for superior thermal performance, enabling efficient heat dissipation and allowing for higher power throughput in constrained spaces. This makes it an ideal choice for modern power conversion systems where thermal management is a critical design challenge. Designers can achieve higher efficiency levels, often exceeding 98%, leading to reduced energy consumption and lower operating temperatures for enhanced system longevity.

ICGOOODFIND: The Infineon IPB017N10N5LFATMA1 OptiMOS™ 5 MOSFET is a benchmark in power semiconductor technology, offering a blend of ultra-low resistance, fast switching speed, and robust thermal performance that is essential for next-generation, high-efficiency power conversion systems.

Keywords: High-Efficiency, OptiMOS™ 5, Ultra-Low R DS(on), Power Density, Thermal Performance.