Infineon IPB117N20NFDATMA1: High-Performance OptiMOS 5 Power MOSFET for Automotive and Industrial Applications
The relentless drive towards higher efficiency, greater power density, and enhanced reliability in power electronics is a defining challenge for designers in the automotive and industrial sectors. Addressing these demands head-on, Infineon Technologies has introduced the IPB117N20NFDATMA1, a state-of-the-art N-channel power MOSFET that exemplifies the superior performance of the company's latest OptiMOS™ 5 200 V technology.
Engineered for robustness, this MOSFET is a cornerstone for applications where operational integrity is non-negotiable. In the automotive realm, it is an ideal candidate for high-performance DC-DC converters in electric and hybrid-electric vehicles (xEVs), battery management systems (BMS), and motor control circuits. Its ability to handle significant power loads with minimal losses directly contributes to extended driving range and improved system efficiency. Similarly, in industrial settings, the device excels in power supplies, solar inverters, and motor drives, where its high switching performance ensures systems can operate at peak performance with reduced thermal stress.
The standout features of the IPB117N20NFDATMA1 are rooted in its advanced semiconductor design. It offers an exceptionally low typical on-state resistance (RDS(on)) of just 1.17 mΩ at 10 V. This ultra-low resistance is pivotal in minimizing conduction losses, which translates into higher efficiency and less heat generation. This allows for the design of more compact systems, as the need for large heatsinks and elaborate cooling solutions is significantly reduced, thereby improving overall power density.
Furthermore, the component is characterized by its outstanding switching performance, which helps to lower switching losses—a critical factor in high-frequency operation. This combination of low RDS(on) and fast switching speed ensures that systems can achieve new benchmarks in efficiency. The MOSFET also boasts a high maximum continuous drain current (ID) of 450 A, underscoring its capability to manage very high current loads in demanding environments.
Beyond pure electrical performance, the device is designed for reliability. It features an AEC-Q101 qualified profile for automotive applications, guaranteeing that it meets the stringent quality and durability standards required for vehicle electronics. Its high avalanche ruggedness and excellent intrinsic body diode behavior add further layers of protection and operational stability, ensuring long-term performance even under harsh conditions.
ICGOOODFIND: The Infineon IPB117N20NFDATMA1 stands as a premier solution for engineers seeking to push the boundaries of efficiency and power density. Its unparalleled combination of ultra-low RDS(on), high current handling, and automotive-grade robustness makes it an indispensable component for the next generation of high-performance automotive and industrial power systems.
Keywords: OptiMOS™ 5, Low RDS(on), Automotive Grade (AEC-Q101), High Power Density, High Switching Performance.
