Infineon ITS4880R: High-Performance 1200 V SiC Trench MOSFET for Automotive Applications

The rapid electrification of the automotive industry demands power semiconductors that offer superior efficiency, robustness, and reliability. Addressing these critical needs, Infineon Technologies has introduced the ITS4880R, a groundbreaking 1200 V Silicon Carbide (SiC) Trench MOSFET specifically engineered for the most demanding automotive applications. This device represents a significant leap forward in enabling higher power density, longer driving ranges, and more compact system designs for electric vehicles (EVs).

At the heart of the ITS4880R is Infineon's advanced CoolSiC™ trench technology. Unlike planar SiC designs, the trench architecture minimizes the cell size and significantly reduces the ON-state resistance (RDS(on)) for a given die area. This results in exceptionally low conduction losses. The device boasts a typical RDS(on) of just 40 mΩ, ensuring that more energy is transferred to the motor and less is wasted as heat. This high efficiency is paramount for extending the driving range of EVs—a key concern for consumers and manufacturers alike.

The 1200 V voltage rating provides a crucial safety margin and design flexibility for 800 V battery systems, which are becoming the new standard in premium electric vehicles. This higher voltage architecture allows for faster charging, reduced cable thickness, and overall lower system weight. The ITS4880R is engineered to operate reliably at these high voltages, featuring low switching losses even at high frequencies. This capability allows designers to increase the switching frequency of inverters and onboard chargers (OBCs), which in turn permits the use of smaller, lighter passive components like inductors and capacitors, leading to a substantial increase in power density.

Designed from the ground up for automotive environments, the ITS4880R meets the stringent AEC-Q101 qualification standard. It exhibits excellent performance under harsh operating conditions, including high ambient temperatures and intense thermal cycling. Its robust body diode ensures reliable third-quadrant operation without the need for external anti-parallel diodes, simplifying inverter design. Furthermore, the module features a low-indunce package design, which is essential for minimizing voltage overshoots and ensuring stable, safe operation during high-speed switching events.

Primary applications for this high-performance MOSFET include the main traction inverter, which is the heart of an EV's powertrain, as well as high-power DC-DC converters and on-board chargers (OBCs). Its performance characteristics make it an ideal choice for improving the efficiency and reducing the size and weight of these critical systems.

ICGOODFIND: The Infineon ITS4880R is a benchmark 1200 V SiC MOSFET that leverages advanced trench technology to deliver minimal switching and conduction losses. Its automotive-grade robustness and high power density make it a pivotal component for next-generation 800 V EV architectures, enabling longer range, faster charging, and more compact vehicle design.

Keywords:

1. Silicon Carbide (SiC)

2. 1200 V MOSFET

3. Automotive Applications

4. Trench Technology

5. Power Density