The global foundry landscape for gallium nitride (GaN) is shifting. TSMC has confirmed plans to fully exit GaN wafer production by 2027. Meanwhile, Samsung Electronics is aggressively stepping into the space, positioning GaN as a core growth driver for its power semiconductor business.

According to South Korea’s THE ELEC, Samsung’s first 8-inch GaN production line is set to begin operations in the second quarter of 2026. Initial revenue is projected at around 100 billion won, as the company steadily ramps capacity. Samsung has already built out its GaN solution stack, including the ability to produce GaN epitaxial wafers in-house, giving it a complete foundry capability ready to fill the gap left by TSMC.

Beyond GaN, Samsung is also advancing its silicon carbide (SiC) business, with plans to bring its SiC power semiconductor foundry line online this year. In SiC, Samsung controls the full process—from design to production. Together, GaN and SiC give Samsung a complementary portfolio across different voltage segments, targeting EVs, fast charging, and industrial control markets.

ICgoodFind: TSMC’s exit and Samsung’s entry are resetting the GaN foundry map. With an 8-inch line and in-house epi capability, Samsung is positioning itself as a major player in next-gen power semiconductors.