Infineon IGD01N120H2: A High-Performance 1200V IGBT7 Discretes for Efficient Power Conversion

The relentless pursuit of higher efficiency, greater power density, and improved reliability in power electronics is driving innovation in semiconductor technology. At the forefront of this evolution is Infineon Technologies' latest generation of IGBTs. The IGD01N120H2 stands as a prime example, a 1200V discrete IGBT leveraging the groundbreaking IGBT7 technology to set a new benchmark for performance in applications ranging from industrial motor drives and renewable energy systems to uninterruptible power supplies (UPS) and EV charging infrastructure.

This device is engineered to minimize losses, a critical factor in energy conversion. The IGBT7 technology introduces a novel micro-pattern trench (MPT) structure and an ultra-thin wafer process. This innovative combination results in significantly reduced Vce(sat) voltage drop during conduction and much lower switching losses (Eoff) during turn-off compared to previous generations. This dual reduction in both conduction and switching losses is a key achievement, as it often involves a trade-off. The IGD01N120H2 masterfully balances this, enabling systems to operate at higher switching frequencies without a punitive efficiency penalty. This, in turn, allows for the use of smaller passive components like magnetics and capacitors, directly contributing to higher power density and reduced system size and cost.

Furthermore, the IGD01N120H2 exhibits an excellent short-circuit ruggedness of 3µs, a vital characteristic for robust operation in demanding industrial environments where fault conditions can occur. Its positive temperature coefficient of Vce(sat) also simplifies the paralleling of multiple devices for higher power applications, ensuring current is shared evenly across the units. The device is offered in the industry-standard TO-247 3-pin package, ensuring both superior thermal performance for effective heat dissipation and easy drop-in compatibility for upgrading existing designs based on older IGBT technologies.

ICGOODFIND: The Infineon IGD01N120H2 is a superior 1200V discrete IGBT that embodies the benefits of the advanced IGBT7 platform. It delivers an optimal blend of ultra-low conduction and switching losses, high short-circuit robustness, and excellent thermal performance. For designers aiming to push the boundaries of efficiency and power density in their next-generation power conversion systems, this device represents a compelling and high-performance solution.

Keywords: IGBT7 Technology, High Efficiency, Low Switching Losses, 1200V Rating, Power Density