Infineon IPD90N06S407ATMA2: High-Performance OptiMOS Power MOSFET for Automotive and Industrial Applications
The relentless drive for higher efficiency, greater power density, and enhanced reliability in power electronics is a defining challenge for designers in the automotive and industrial sectors. Addressing these demands, Infineon Technologies has engineered the IPD90N06S407ATMA2, a standout member of its renowned OptiMOS™ power MOSFET family. This device is specifically tailored to deliver superior switching performance and ruggedness in the most demanding environments.
At its core, the IPD90N06S407ATMA2 is an N-channel MOSFET built on Infineon’s advanced OptiMOS™ 7 technology platform. It is characterized by an exceptionally low typical on-state resistance (RDS(on)) of just 1.8 mΩ at a gate-source voltage of 10 V. This ultra-low RDS(on) is a critical factor in minimizing conduction losses, which directly translates to higher system efficiency, reduced heat generation, and the potential for more compact thermal management solutions. The device is rated for a drain-source voltage (VDS) of 60 V and a continuous drain current (ID) of 180 A, making it an ideal switch for high-current applications such as DC-DC converters, motor control systems, and solid-state relays.
A key strength of this MOSFET lies in its optimized for automotive qualification (AEC-Q101) and robust design. It is engineered to withstand the harsh conditions typical of automotive applications, including extreme temperature fluctuations, high humidity, and significant mechanical stress. This makes it perfectly suited for use in electric power steering (EPS), braking systems, transmission control, and 12/48 V board net solutions. Furthermore, its high performance is equally valuable in industrial settings, including power supplies, industrial motor drives, and solar inverters, where operational longevity and failure resistance are paramount.
The component also features a low gate charge (QG) and very small reverse recovery charge (Qrr). These parameters are essential for achieving high-frequency switching operations, which allow designers to increase the power density of their systems by using smaller passive components like inductors and capacitors. The combination of low RDS(on) and excellent switching characteristics ensures that the MOSFET operates efficiently across a wide range of frequencies and load conditions.
Packaged in a SuperSO8 (PG-TDSON-8) housing, the IPD90N06S407ATMA2 offers an excellent power-to-size ratio. This package not only provides superior thermal performance, aiding in effective heat dissipation, but also contributes to a smaller overall footprint on the printed circuit board (PCB).
ICGOOODFIND: The Infineon IPD90N06S407ATMA2 represents a peak in power MOSFET technology, offering an industry-leading blend of ultra-low resistance, high current handling, and automotive-grade robustness. It is a pivotal component for engineers aiming to push the boundaries of efficiency and reliability in next-generation automotive and industrial power systems.
Keywords: OptiMOS Power MOSFET, Low RDS(on), Automotive Grade (AEC-Q101), High Current Switching, Power Efficiency.
