Infineon FP35R12KT4_B15: A High-Performance 35A IGBT Module for Power Conversion Systems

The relentless pursuit of efficiency, power density, and reliability in modern power electronics is largely driven by the continuous innovation in semiconductor switching devices. At the forefront of this evolution is the Infineon FP35R12KT4_B15, a robust 35A IGBT module engineered to excel in demanding power conversion applications. This module represents a sophisticated integration of advanced IGBT and diode technology, packaged to deliver superior performance in systems ranging from industrial motor drives and renewable energy inverters to uninterruptible power supplies (UPS).

Engineered for Superior Performance and Efficiency

The core of the FP35R12KT4_B15's prowess lies in its use of Infineon's latest IGBT4 trench-stop technology. This technology is pivotal in achieving an optimal balance between low saturation voltage (Vce(sat)) and minimal switching losses. The result is a device that operates with remarkably high efficiency, directly contributing to reduced energy dissipation and lower operating temperatures in the end system. The module is rated for a blocking voltage of 1200V, making it exceptionally suitable for three-phase systems operating from standard industrial bus voltages.

Complementing the advanced IGBTs are Emitter Controlled 7th generation diodes, which are co-packaged within the same module. These diodes are specifically designed to exhibit very soft recovery behavior and low reverse recovery current. This characteristic is critical for minimizing voltage overshoots and electromagnetic interference (EMI), thereby enhancing the overall system's reliability and simplifying the design of snubber circuits and EMI filters.

Robust Construction and Thermal Management

Housed in a industry-standard 34mm EconoDUAL™ 3 package, this module is designed for mechanical robustness and excellent thermal performance. The package facilitates easy mounting onto heatsinks, and its internal design ensures low thermal resistance from the semiconductor junction to the baseplate. This allows designers to extract maximum power output while maintaining safe operating junction temperatures, even under strenuous conditions. The module's high power cycling capability ensures long-term reliability, which is a paramount concern for industrial and infrastructure applications where downtime is not an option.

Application-Oriented Design

The FP35R12KT4_B15 is not just a collection of superior components but a system-level solution. Its integrated six-pack (or six-in-one) configuration, which includes a complete three-phase bridge inverter, significantly reduces the part count and simplifies the PCB layout and assembly process for designers. This integration leads to increased power density and more compact inverter designs. Furthermore, the module offers a high maximum operating junction temperature (Tvjop) of 150°C, providing designers with greater flexibility in managing thermal budgets and handling overload scenarios.

ICGOOODFIND

The Infineon FP35R12KT4_B15 stands as a testament to power semiconductor innovation, masterfully combining high efficiency, robust switching characteristics, and exceptional integration. It empowers engineers to build next-generation power conversion systems that are not only more powerful and compact but also more reliable and energy-efficient, meeting the stringent demands of today's industrial and green energy markets.

Keywords:

IGBT Module

Power Conversion

Efficiency

Thermal Management

EconoDUAL 3